发明名称 MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING SAME
摘要 An object of the invention is to ensure the thermal stability of magnetization even when a magnetic memory element is miniaturized. A magnetic memory element includes a first magnetic layer (22), an insulating layer (21) that is formed on the first magnetic layer (22), and a second magnetic layer (20) that is formed on the insulating layer (21). At least one of the first magnetic layer (22) and the second magnetic layer (20) is strained and deformed so as to be elongated in an easy magnetization axis direction of the magnetic layer (22) or (20) or compressive strain (101) remains in any direction in the plane of at least one of the first magnetic layer and the second magnetic layer.
申请公布号 EP2333826(A4) 申请公布日期 2013.01.23
申请号 EP20090811360 申请日期 2009.07.08
申请人 FUJI ELECTRIC CO., LTD. 发明人 YAMADA, MICHIYA;OGIMOTO, YASUSHI
分类号 H01L21/8246;G11C11/16;H01L21/314;H01L23/28;H01L27/105;H01L43/08 主分类号 H01L21/8246
代理机构 代理人
主权项
地址