| 摘要 |
<p>PURPOSE: A semiconductor device is provided to improve heat radiation performance using a metal substrate with high thermal conductivity. CONSTITUTION: A first conductive layer(102) is formed on a conductive substrate(100). An oxide semiconductor layer(103) is formed on the first conductive layer. A second conductive layer(104) is formed on the upper side of an island-shaped region(103) of the oxide semiconductor layer. A first insulation layer(105) is formed on the second conductive layer and the oxide semiconductor layer. A third conductive layer(106) is formed on the side of the island-shaped region of the oxide semiconductor layer. A second insulation layer(107) is formed on the first insulation layer and the third conductive layer.</p> |
