SUBSTRATE FOR PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION DEVICE USING SAME, METHOD FOR PRODUCING THE SUBSTRATE FOR PHOTOELECTRIC CONVERSION DEVICE, AND METHOD FOR MANUFACTURING THE PHOTOELECTRIC CONVERSION DEVICE

摘要

A photoelectric conversion device (1) includes a substrate (2) and a transparent, electrically conductive film (3) covering at least a portion of a major surface of the substrate (2) and having an irregular geometry on a surface thereof closer to a semiconductor layer. Furthermore, the photoelectric conversion device (1) includes a first conduction type semiconductor layer (5) covering at least a portion of the irregular geometry of the transparent, electrically conductive film (3), and a light absorption layer (6) covering the first conduction type semiconductor layer (5). The irregular geometry has a bump (10) having a maximum height equal to or larger than 50 nm and equal to or smaller than 1200 nm. The bump (10) has a surface having a submicron recess (11) having local peaks (15A, 15B) having a spacing equal to or larger than 2 nm and equal to or smaller than 25 nm. Preferably, the first conduction type semiconductor layer (5) is larger in thickness on a bottom (26) of the submicron recess (11) than at a portion other than the bottom (26). Preferably, the first conduction type semiconductor layer (5) and the light absorption layer (6) have their interface with a maximum depth (B max ) smaller than the submicron recess's maximum depth (D max ).