MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve interface adhesion between a low dielectric constant film and a protection film without damaging excellent dielectric properties of an organic low dielectric constant material, flatness and gap filling characteristics. SOLUTION: A resist 30 is removed by ashing employing plasma using mixture gas containing nitrogen and hydrogen. The content of hydrogen in mixture gas is 20% or less in volume base.