METHOD OF MANUFACTURING GATES FOR PREVENTING SHORTS BETWEEN THE GATES AND SELF-ALIGNED CONTACTS AND SEMICONDCUTOR DEVICES HAVING THE SAME

摘要

PURPOSE: A gate forming method for preventing a short between a gate and a self-aligned contact and a semiconductor device including the gate are provided to prevent a top layer and a resistance structure from being removed by forming a second photoresist to cover the resistance structure and a peripheral region of the resistance structure. CONSTITUTION: A metal gate(121) of a transistor is formed near an insulation layer on a substrate(100). A metal gate includes a first metal(177) and a second metal. A hard mask including an opening is formed on the substrate with the metal gate. A metal pullback process is performed to etch a part of the upper side of the metal gate with a preset depth. A protection layer(212) is deposited on the hard mask and the etched metal gate. A CMP is performed to remove the hard mask and the protection layer.