发明名称 |
VARIABLE ACTIVE INDUCTOR CIRCUIT OF MICROWAVE MONOLITHIC INTEGRATED CIRCUIT |
摘要 |
PURPOSE: A variable active inductor circuit of a microwave monolithic integrated circuit(MMIC) is provided to have a low serial resistance and a high Q value by reducing a signal loss in an ultra high frequency band. CONSTITUTION: A variable active inductor circuit of an MMIC includes a first field effect transistor(FET1), a second field effect transistor(FET2) connected to the first field effect transistor(FET1), a first stabilized feedback capacitor(C2) connected between a gate of the first field effect transistor(FET1) and a drain of the second field effect transistor(FET2), a variable resistor(R2) connected to the first stabilized feedback capacitor(C2) in serial and connected to the drain of the second field effect transistor(FET2) and a second stabilized feedback capacitor(C1). One end of the second stabilized feedback capacitor(C1) is connected a connecting node(201) between the first stabilized feedback capacitor(C2) and the variable resistor(R2) and the other end of the second stabilized feedback capacitor(C1) is connected to a connecting node(203) between the source of the first field effect transistor(FET1) and a gate of second field effect transistor(FET2).
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申请公布号 |
KR20020085672(A) |
申请公布日期 |
2002.11.16 |
申请号 |
KR20010025302 |
申请日期 |
2001.05.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, SANG HO |
分类号 |
H03F3/00;(IPC1-7):H03F3/00 |
主分类号 |
H03F3/00 |
代理机构 |
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地址 |
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