SEMI-POLAR OR NON-POLAR NITRIDE SEMICONDUCTOR SUBSTRATE, DEVICE, AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semi-polar or non-polar nitride semiconductor substrate, a device and a method for manufacturing the same are provided to laterally grow nitride layer and to reduce defects in multi-quantum wells. CONSTITUTION: A mask layer(302) is deposited on a substrate. A patterning process is performed on the mask layer. An opening part is formed by the patterning process. A nitride layer(303) is horizontally and vertically grown through the opening part. Multi-quantum well layer(305) is grown in the upper part of the nitride layer.