| 摘要 |
A method of coating a non-refractory and/or non-planar substrate 2 with synthetic diamond material using a microwave plasma chemical vapour deposition (MWCVD) synthesis technique is described. The method details forming a composite substrate assembly comprising: a support substrate 2 with an upper surface 4 and one or more electrically conductive refractory guards 6 disposed over the upper surface 4 of the support substrate 2, extending to a height hg above the upper surface 4 of the support substrate 2; and one or more non-refractory and/or non-planar substrates 8 disposed over the upper surface 4 of the support substrate 2, wherein the height hs above the upper surface 4 of the support substrate 2, where the height hs and where the difference in height hg hs lies in the range of 0.2-10mm. The composite substrate assembly is located within a plasma chamber of the microwave plasma CVD reactor (Figure 5). The process gases are fed into the plasma chamber with microwave plasma where plasma is formed at a location over the composite substrate assembly thus growing synthetic diamond on the one or more non-refractory and/or non-planar substrates. |
