发明名称
摘要 <P>PROBLEM TO BE SOLVED: To provide a patterning process which ensures increased resolution property and process margin and high throughput, does not require an etching device for dry development, and achieves resolution comparable to that by double dipole lithography. <P>SOLUTION: The patterning process using positive/negative reversal includes: applying a chemically amplified positive resist material comprising a resin comprising acid labile group-containing repeating units, a photoacid generator or this generator and a thermal acid generator, and an organic solvent, onto a substrate to be processed, and removing the solvent to form a resist film; exposing the resist film to high-energy radiation through a phase shift mask having an array of chromeless shifters, heating it to bring the acid labile groups into elimination reaction, and then developing it to form a positive pattern; illuminating or heating the positive pattern to eliminate the acid labile groups for increasing alkali solubility and to induce crosslinking for imparting organic solvent resistance; forming a reversal film with a reversal film forming composition; and dissolving away the positive pattern in an alkaline wet etchant. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP5124818(B2) 申请公布日期 2013.01.23
申请号 JP20090006595 申请日期 2009.01.15
申请人 发明人
分类号 G03F7/40;C08F220/10;G03F7/004;G03F7/039;H01L21/027 主分类号 G03F7/40
代理机构 代理人
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