| 摘要 |
PROBLEM TO BE SOLVED: To provide a copper alloy showing superior bare bondability when an unplated inner lead part of a lead frame is directly bonded with a bonding wire, and to provide a method for manufacturing the copper alloy superior in the bare bondability. SOLUTION: The copper alloy includes a group of elements of which the free energy of formation for an oxide to be formed in a range of temperatures when the wire is bonded with a semiconductor device is lower than that of Cu element, in an amount of more than 0.1 mass% but less than 1 mass%. The copper alloy for the lead frame superior in bare bondability has a modified layer with a thickness of 0.2μm or less formed by working on the surface layer of the copper alloy. COPYRIGHT: (C)2008,JPO&INPIT |
