PROCESS FOR PRODUCING SOLAR BATTERY ELEMENT AND SOLAR BATTERY ELEMENT

摘要

Provided is a superstrate type a-Si:H thin film solar cell of which the device characteristics are improved as compared with conventional ones. The solar cell device is manufactured by a process comprising depositing phosphorus on a transparent conductive film formed on a transparent substrate and sequentially forming a p-type layer, an i-type layer, and an n-type layer which are formed of a-Si:H on the transparent conductive film by a plasma CVD method. The phosphorus is deposited, for example, by plasmatization of phosphorus-containing gas. Alternatively, the phosphorus is deposited by etching a phosphorus source provided in a margin region where a plasma excitation voltage is applied but no transparent substrate is placed, with hydrogen plasma at the start of the formation of the p-type layer by the plasma CVD method. Preferably, the deposition of phosphorus is controlled so that the arithmetic average value (”Cav) of the concentration difference between boron and phosphorus within a range of diffusion of boron in the i-type layer may be 1.1 × 10 17 �¢ c �¢ m - 3 ‰¤ ” �¢ C �¢ a �¢ v ‰¤ 1.6 × 10 17 �¢ c �¢ m - 3 o �¢ r l �¢ e �¢ s �¢ s .