发明名称 |
METHOD FOR DEPOSITING HIGH-QUALITY MICROCRYSTALLINE SEMICONDUCTOR MATERIALS |
摘要 |
<p>A process for the plasma deposition of a layer of a microcrystalline semiconductor material is carried out by energizing a process gas which includes a precursor of the semiconductor material and a diluent with electromagnetic energy so as to create a plasma therefrom. The plasma deposits a layer of the microcrystalline semiconductor material onto the substrate. The concentration of the diluent in the process gas is varied as a function of the thickness of the layer of microcrystalline semiconductor material which has been deposited. Also disclosed is the use of the process for the preparation of an N-I-P type photovoltaic device.</p> |
申请公布号 |
EP1743360(A4) |
申请公布日期 |
2013.01.23 |
申请号 |
EP20050722508 |
申请日期 |
2005.01.24 |
申请人 |
UNITED SOLAR SYSTEMS CORPORATION |
发明人 |
GUHA, SUBHENDU;YANG, CHI, C.;YAN, BAOJIE |
分类号 |
H01L21/205;C23C16/24;C23C16/455;H01L21/02;H01L31/18;H01L31/20 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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