| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a new group III-V nitride semiconductor device with high breakdown voltage and also with low on-voltage. <P>SOLUTION: On the side of a first nitride semiconductor layer in a convex shape consisting of a group III-V nitride semiconductor layer, a second nitride semiconductor layer of micro crystallite structure is laminated. A first anode electrode is connected by Shottky junction to the convex-shaped upper surface, and the second anode electrode is connected by Shottky junction to the side surface. The height of the Shottky barrier of the junction formed between the second anode electrode and the second nitride semiconductor layer is constituted so that it may become higher than the height of the Shottky barrier of the junction formed between the first anode electrode and the first nitride semiconductor layer. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
