First in first out type memory circuit for e.g. static RAM, has chain of stages, each with two NMOS transistors, and encoder circuit to encode information to be stored to prohibit storage of two consecutive ones in chain of stages

摘要

The circuit has a chain of elementary stages, each comprising an input, an output and a control. Each stage has two NMOS transistors, whose sources and drains are connected in series between two reference potentials. The gate of one transistor controls the propagation of information to be stored and the gate of another transistor serves as input point in the stage. An encoder circuit (70) encodes the information to be stored to prohibit the storage of two consecutive 1`s in the chain of stages. Independent claims are also included for the following: (1) a method of writing in a memory circuit (2) a method of reading in a memory circuit.