发明名称 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
摘要 PURPOSE: A semiconductor device and a manufacturing method thereof are provided to adjust the width of a bottom electrode by using first and second support layer patterns and to prevent a bridge phenomenon. CONSTITUTION: Multiple bottom electrodes(170) are arranged on a substrate. A first support layer pattern(130) contacts the lower part of the bottom electrodes. The second support layer pattern(150) contacts the upper part of the bottom electrodes. A dielectric layer is formed on the bottom electrodes. The upper electrode is formed on the dielectric layer. [Reference numerals] (AA) Third direction; (BB) First direction; (CC) Second direction
申请公布号 KR20130008691(A) 申请公布日期 2013.01.23
申请号 KR20110069188 申请日期 2011.07.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, SUNG HO;CHOI, JIN;YOO, YONG HO;KANG, JONG HYUK;CHA, HYUN JOO;PARK, HEE DONG;PARK, TAE JUNG
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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