发明名称 TEMPERATURE DETECTING APPARATUS, SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE: A temperature detecting apparatus, a substrate processing apparatus, and a method for manufacturing a semiconductor device are provided to suppress the restriction of a thermal expansion of a thermocouple wire by forming a buffer region on the lower side of an insulation tube. CONSTITUTION: An insulation tube(32) includes a through hole in a vertical direction. A thermocouple wire(22) is inserted into the through hole of the insulation tube. The thermocouple wire includes a thermocouple junction part(23). A buffer region is formed on the lower side of the insulation tube. A thermocouple wire support unit(24) is installed in the thermocouple wire between the thermocouple junction part and the upper section of the insulation tube.</p>
申请公布号 KR20130009618(A) 申请公布日期 2013.01.23
申请号 KR20120070036 申请日期 2012.06.28
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 KOSUGI TETSUYA;UENO MASAAKI;YAMAGUCHI HIDETO
分类号 H01L21/66;H01L21/205;H01L21/22 主分类号 H01L21/66
代理机构 代理人
主权项
地址