发明名称 |
TEMPERATURE DETECTING APPARATUS, SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>PURPOSE: A temperature detecting apparatus, a substrate processing apparatus, and a method for manufacturing a semiconductor device are provided to suppress the restriction of a thermal expansion of a thermocouple wire by forming a buffer region on the lower side of an insulation tube. CONSTITUTION: An insulation tube(32) includes a through hole in a vertical direction. A thermocouple wire(22) is inserted into the through hole of the insulation tube. The thermocouple wire includes a thermocouple junction part(23). A buffer region is formed on the lower side of the insulation tube. A thermocouple wire support unit(24) is installed in the thermocouple wire between the thermocouple junction part and the upper section of the insulation tube.</p> |
申请公布号 |
KR20130009618(A) |
申请公布日期 |
2013.01.23 |
申请号 |
KR20120070036 |
申请日期 |
2012.06.28 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
KOSUGI TETSUYA;UENO MASAAKI;YAMAGUCHI HIDETO |
分类号 |
H01L21/66;H01L21/205;H01L21/22 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|