发明名称 |
Flash memory programming with data dependent control of source lines |
摘要 |
Techniques for programming a non-volatile memory device, such as a Flash memory, include floating source lines of memory cells based on a data pattern that is being programmed to the memory device. The source lines to float are selected such that a distance between drain bit lines and source bit lines of different memory cells in a row is maximized. In this manner, leakage current between these drain bit lines and source bit lines can be decreased.
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申请公布号 |
US8358543(B1) |
申请公布日期 |
2013.01.22 |
申请号 |
US20050229529 |
申请日期 |
2005.09.20 |
申请人 |
SPANSION LLC;WANG GUOWEI;CHANDRA SACHIT;YANG NIAN |
发明人 |
WANG GUOWEI;CHANDRA SACHIT;YANG NIAN |
分类号 |
G11C16/00;G11C16/04;G11C16/06 |
主分类号 |
G11C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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