发明名称 |
Phase-change memory device |
摘要 |
A phase-change memory device includes: a unit cell including a phase-change resistor; a sense amplifier applying a sensing current to the phase-change resistor; and a switching unit operating in a standby mode or a read mode according to a global line signal and controlling passing presence of the sensing current passing through the phase-change resistor according to an active signal in the standby mode.
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申请公布号 |
US8358533(B2) |
申请公布日期 |
2013.01.22 |
申请号 |
US20100834678 |
申请日期 |
2010.07.12 |
申请人 |
HYNIX SEMICONDUCTOR INC.;YOON TAE HOON;YOON HYUCK SOO |
发明人 |
YOON TAE HOON;YOON HYUCK SOO |
分类号 |
G11C11/00;G11C5/14 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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