发明名称 |
MANUFACTURING METHOD FOR THIN FILM TRANSISTOR SUBSTRATE |
摘要 |
A method of manufacturing a thin film transistor array panel is provided to simplify a manufacturing process by forming photoresist patterns through a printing method. An insulating substrate(110) is prepared. A gate electrode(122) is formed on the insulating substrate. A gate insulating layer(130), a semiconductor layer(140), an ohmic contact layer(151,152) and a data line layer(162,163) are sequentially formed on the insulating substrate. A first photoresist film corresponding to the gate electrode is transferred onto the data line layer using Gravure printing. A second photoresist film thicker than the first photoresist film is transferred onto the region surrounding the first photoresist film using Gravure printing. A source electrode(162), a drain electrode(163) and a channel are formed through an etch process using the first and second photoresist films. |
申请公布号 |
KR20070027874(A) |
申请公布日期 |
2007.03.12 |
申请号 |
KR20050079744 |
申请日期 |
2005.08.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JI WON;KIM, BYOUNG JOO;JO, GUG RAE;KIM, JIN SEUK;CHOI, JIN KYUNG;SHIM, YI SEOP |
分类号 |
G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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