发明名称 MANUFACTURING METHOD FOR THIN FILM TRANSISTOR SUBSTRATE
摘要 A method of manufacturing a thin film transistor array panel is provided to simplify a manufacturing process by forming photoresist patterns through a printing method. An insulating substrate(110) is prepared. A gate electrode(122) is formed on the insulating substrate. A gate insulating layer(130), a semiconductor layer(140), an ohmic contact layer(151,152) and a data line layer(162,163) are sequentially formed on the insulating substrate. A first photoresist film corresponding to the gate electrode is transferred onto the data line layer using Gravure printing. A second photoresist film thicker than the first photoresist film is transferred onto the region surrounding the first photoresist film using Gravure printing. A source electrode(162), a drain electrode(163) and a channel are formed through an etch process using the first and second photoresist films.
申请公布号 KR20070027874(A) 申请公布日期 2007.03.12
申请号 KR20050079744 申请日期 2005.08.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, JI WON;KIM, BYOUNG JOO;JO, GUG RAE;KIM, JIN SEUK;CHOI, JIN KYUNG;SHIM, YI SEOP
分类号 G02F1/136 主分类号 G02F1/136
代理机构 代理人
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