发明名称 Delay-locked-loop circuit, semiconductor device and memory system having the delay-locked-loop circuit
摘要 A delay-locked-loop (DLL) circuit having a DLL that operates when an external clock signal has a low frequency and a DLL that operates when an external clock signal has a high frequency is disclosed. The DLL circuit includes a first DLL and second DLL. The first DLL adjusts a delay time of an external clock signal to generate a first internal clock signal synchronized with the external clock signal when the external clock signal has a low frequency. The second DLL adjusts the delay time of the external clock signal to generate a second internal clock signal synchronized with the external clock signal when the external clock signal has a high frequency.
申请公布号 US8358547(B2) 申请公布日期 2013.01.22
申请号 US20100979814 申请日期 2010.12.28
申请人 SAMSUNG ELECTRONICS CO., LTD.;CHOI JUNG-HWAN 发明人 CHOI JUNG-HWAN
分类号 G11C8/00 主分类号 G11C8/00
代理机构 代理人
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