发明名称 |
Nonvolatile memory device and method with multiple verification pass voltages |
摘要 |
A nonvolatile memory device includes an operation voltage generation unit configured to generate a first pass voltage when a verification voltage is higher than a reference voltage and to generate a second pass voltage lower than the first pass voltage when the verification voltage is lower than the reference voltage.
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申请公布号 |
US8358536(B2) |
申请公布日期 |
2013.01.22 |
申请号 |
US20100763539 |
申请日期 |
2010.04.20 |
申请人 |
HYNIX SEMICONDUCTOR INC.;WANG IN SOO |
发明人 |
WANG IN SOO |
分类号 |
G11C11/34;G11C16/04 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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