发明名称 |
Nitride semiconductor laser device and wafer |
摘要 |
Provided is a nitride semiconductor laser device that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.
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申请公布号 |
US8358675(B2) |
申请公布日期 |
2013.01.22 |
申请号 |
US20100801800 |
申请日期 |
2010.06.25 |
申请人 |
SHARP KABUSHIKI KAISHA;TANI KENTARO;TANI YOSHIHIKO;KAWAKAMI TOSHIYUKI |
发明人 |
TANI KENTARO;TANI YOSHIHIKO;KAWAKAMI TOSHIYUKI |
分类号 |
H01S3/097 |
主分类号 |
H01S3/097 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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