| 摘要 |
PURPOSE: A vertical light emitting diode is provided to improve performance by minimizing excess current and photon absorption effects due to an n-type electrode. CONSTITUTION: A conductive electrode, a metal support layer(20), a p-type semiconductor layer, and a current blocking part(90), an active layer(60), an n-type semiconductor layer, and an n-type electrode are successively arranged from the lowermost part of a light emitting diode for forming a vertical light emitting diode. A Cr layer, an Al layer, a Pt layer, and an Au layer are successively arranged on the n-type semiconductor layer when the n-type electrode includes two or more metal layers which include the Cr layer. The reflectivity of the light emitting diode is increased when the thickness of the Cr layer is reduced while maintaining thickness of other metal layers. |
