| 摘要 |
PROBLEM TO BE SOLVED: To provide good SIV resistance and EM resistance in a connecting structure including a copper film. SOLUTION: The semiconductor device 100 includes a semiconductor substrate, a second insulating layer 112 formed on the semiconductor substrate, a second barrier metal film 118 formed on the second insulating layer 112 to prevent diffusion of copper to the second insulating layer 112, and a second conductive film 122 including copper and carbon formed on the second barrier metal film 118 in contact with the relevant second barrier metal film 118. Concentration distribution of carbon in the laminating direction in the second conductive film 122 has a first peak and a second peak. COPYRIGHT: (C)2007,JPO&INPIT |
