发明名称 METHOD FOR FABRICATING LIGHT EMITTING DIODES
摘要 PURPOSE: A method for manufacturing a light emitting diode is provided to improve light extraction efficiency by using an ion implantation method combining a self-alignment method. CONSTITUTION: A first conductive semiconductor layer(20) is formed on a substrate(10). A light emitting layer(30) is formed on the first conductive semiconductor layer. A second conductive semiconductor layer(40) is formed on the light emitting layer. A current suppressing layer is formed on the upper side and the lower side of the second conductive semiconductor layer. A pad electrode is formed on a transparent electrode layer.
申请公布号 KR101219290(B1) 申请公布日期 2013.01.21
申请号 KR20110116013 申请日期 2011.11.08
申请人 INDUSTRY-ACADEMY COOPERATION CORPS OF SUNCHON NATIONAL UNIVERSITY 发明人 KWAK, JOON SEOP;KIM, YONG DEOK;PARK, MIN JOO;SON, KWANG JEONG
分类号 H01L33/36 主分类号 H01L33/36
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