PURPOSE: A method for manufacturing a light emitting diode is provided to improve light extraction efficiency by using an ion implantation method combining a self-alignment method. CONSTITUTION: A first conductive semiconductor layer(20) is formed on a substrate(10). A light emitting layer(30) is formed on the first conductive semiconductor layer. A second conductive semiconductor layer(40) is formed on the light emitting layer. A current suppressing layer is formed on the upper side and the lower side of the second conductive semiconductor layer. A pad electrode is formed on a transparent electrode layer.
申请公布号
KR101219290(B1)
申请公布日期
2013.01.21
申请号
KR20110116013
申请日期
2011.11.08
申请人
INDUSTRY-ACADEMY COOPERATION CORPS OF SUNCHON NATIONAL UNIVERSITY
发明人
KWAK, JOON SEOP;KIM, YONG DEOK;PARK, MIN JOO;SON, KWANG JEONG