发明名称 METHOD FOR SEPARATING SUBSTRATE AND PRODUCTION METHOD FOR BONDING SUBSTRATE USING THE SAME
摘要 PURPOSE: A substrate separating method and a method for manufacturing a bonding substrate using the same are provided to improve quality by releasing stress of the substrate through annealing after ions are implanted. CONSTITUTION: An ion implantation layer is formed by implanting a first ion to a substrate(S110). A substrate with the ion implantation layer is annealed(S120). A second ion is implanted to the ion implantation layer(S130). The substrate is separated by heating the substrate to which the second ion is implanted(S140). The annealing process and the second ion implantation process are repeated several times. [Reference numerals] (S110) First ion implanting step; (S120) Annealing step; (S130) Second ion implanting step; (S140) Separating step
申请公布号 KR101219358(B1) 申请公布日期 2013.01.21
申请号 KR20110074054 申请日期 2011.07.26
申请人 SAMSUNG CORNING PRECISION MATERIALS CO., LTD. 发明人 KIM, DONG WOON;SHUR, JOONG WON;LEE, BO HYUN;KIM, DONG HYUN;JANG, BONG HEE;KIM, MIN JU;PARK, SEUNG YONG;YU, YULIA;KIM, MI KYOUNG;BAE, SEUL GI
分类号 H01L21/20;H01L31/18 主分类号 H01L21/20
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