METHOD OF MANUFACTURING A PHASE CHANGE MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a phase change memory device is provided to prevent the generation of an oxide film by performing a reflow process. CONSTITUTION: An opening(115) is formed in an interlayer insulating film(110). The opening is buried to form a phase change material layer. A plasma process is performed on the phase change material layer. And then, an oxide film is removed on the surface of the change material layer. A thermal process is performed on the phase change material layer.