| 摘要 |
<p>PURPOSE: A light emitting device, a method for fabricating the same, and a light emitting device package are provided to increase the band gap of a well layer which is most near to a semiconductor layer and to improve the energy level of recombination. CONSTITUTION: A second conductivity type semiconductor layer is formed on a first conductivity type semiconductor layer. An active layer is arranged between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The active layer includes multiple well layers and multiple barriers. A first well(W1) has a thickness which is thinner than that of a second well layer(W2). The barriers include a first barrier(B1) and a second barrier(B2).</p> |
