| 摘要 |
PURPOSE: A method for manufacturing a phase change memory device is provided to form a phase change material pattern with a vertical profile by repeating a treatment process to etch phase change materials and remove metallic byproducts. CONSTITUTION: Phase change materials and conductive materials are successively laminated on a semiconductor substrate(110). A switching device and a heating electrode pattern(145) are formed on the semiconductor substrate. The phase change materials and the conductive materials are removed with a predetermined height several times. A phase change material pattern(155) is formed on a diode and the heating electrode pattern. Etching materials are used by combining Cl2, CxHy, CxHyFz, CFx, BCL3, N2, or Ar gases. |
