LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME
摘要
PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve the crystallization of a semiconductor layer by forming dislocations in a semiconductor layer and an active layer. CONSTITUTION: An active layer(130) is formed on a first conductivity type semiconductor layer(120). A second conductive semiconductor layer(140) is formed on the active layer. One of the first conductivity type semiconductor layer and the active layer includes dislocations.
申请公布号
KR20130007682(A)
申请公布日期
2013.01.21
申请号
KR20110059765
申请日期
2011.06.20
申请人
LG INNOTEK CO., LTD.
发明人
LEE, SUN KYUN;CHO, HYUN KYONG;LEE, JANG HO;LIM, HYUN SOO;KWACK, HO SANG;KWON, HO KI;JUNG, SUNG HOON