METHOD FOR FORMING SiX-BASED FILM

摘要

PROBLEM TO BE SOLVED: To provide a technology capable of effectively suppressing the occurrence of particles of a Si system unreacted intermediate when forming a silicon nitride system film.

SOLUTION: The method for forming the SiX system film by plasma CVD method comprises an X-based plasma producing step for producing the plasma by supplying the X-based gas, and an Si-based plasma producing step for producing a plasma by firstly supplying the Si-based gas after producing the X-based plasma by the X-based plasma producing step.

COPYRIGHT: (C)2007,JPO&INPIT