| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing method being, capable of continuously polishing the residual film of a conductor film and a barrier metallic film by the same polishing liquid for a metal in a substrate with an insulating film, the barrier metal film and the conductor film, improving the flatness of a wiring section and the projecting section of the insulating film and capable of reducing a scratch and the polishing liquid for the metal used for the polishing method. <P>SOLUTION: The polishing liquid for the metal is used for the chemical-mechanical polishing of the conductor film consisting of copper or a copper alloy and the barrier metal film in the manufacture of a semiconductor device. The polishing liquid for the metal contains a component (1): a colloidal silica grain component, having a primary grain size of 10 to 35 nm and the degree of association of 5 or less and the component (2): the colloidal silica grain component, having the primary grain size of 50 to 100 nm and the degree of association of 5 or smaller. The polishing liquid for the metal further contains the component (3): an oxidant component and the component (4): an aminocarboxylic acid, having two or more of carboxyl groups. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
