| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing liquid being used for the chemical mechanical polishing of a body to be polished with an insulating film having a low dielectric constant, a barrier metallic layer and a conductor film carried out in the manufacture of a semiconductor device and enabling a polishing having a low load inhibiting the damage of the insulating film having the low dielectric constant while being capable of polishing the insulating film having the low dielectric constant at a proper polishing selection ratio. <P>SOLUTION: The polishing liquid is used for the chemical mechanical polishing of the body to be polished with the insulating film having the low dielectric constant, the barrier metallic layer and the conductor film carried out in the manufacture of the semiconductor device. The polishing liquid contains colloidal silica in which a part of a surface is coated with aluminum atoms. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
