ETCHING METHOD, ETCHING SOLUTION FOR USE THEREIN, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT USING THE SAME

摘要

PURPOSE: An etching method, an etchant used for the same, and a method for manufacturing a semiconductor substrate product by using the etchant are provided to improve productivity by effectively removing dry etching residues. CONSTITUTION: A semiconductor substrate(10) comprises a first layer with Ti, and a second layer with one of the Cu, SiO, SiN, SiOC and the SiON. The first layer is selectively etched as a specific etchant is applied to the semiconductor substrate. The specific etchant comprises a basic compound consisting of an organic amine compound, and an oxidizing agent in an aqueous medium. The pH of the specific etchant is 7-14.