| 摘要 |
PURPOSE: An optical semiconductor device and a manufacturing method thereof are provided to form first and second connection electrodes which do not have a step between the connection electrodes. CONSTITUTION: An optical semiconductor device(10) comprises first and second semiconductor layers(12,13), first and second electrodes(14a,14b), first and second connection electrodes(52,51), and a protective film. The second semiconductor layer is formed on a portion of the top surface of the first semiconductor layer. The first electrode is formed on the other portion of the top surface of the first semiconductor layer. The second electrode is formed on the top surface of the second semiconductor layer. The first connection electrode is formed on the top surface of the first electrode. The second connection electrode is formed on the top surface of the second electrode. The protective film covers the surfaces of the first and second semiconductor layers and has an opening(21) for exposing a portion of the surface of the first semiconductor layer. [Reference numerals] (10) Optical semiconductor device; (11) Sapphire substrate; (12) n-type layer; (13) p-type layer; (14a) n-electrode; (14b) p-electrode; (15) Protective film; (21) Opening; (22) Groove; (31) Lower layer current film; (32) Upper layer current film; (33) Current film; (51) p-bump; (52) n-bump
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