LIGHT EMITTING DIODE WITH ANTI-REFLECTIVE FILM AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A light emitting device with an antireflection layer and a manufacturing method thereof are provided to improve light output efficiency by transmitting light from an active layer without total reflection. CONSTITUTION: An n type nitride layer(130) is formed on a substrate. An active layer is formed on the upper side of the n type nitride layer. A p type nitride layer(150) is formed on the upper side of the active layer. A p side electrode is formed on the upper side of the p type nitride layer. An n type electrode(181) is formed in the exposure region of the n type nitride layer.