STACK STRUCTURE HAVING TWO-DIMENSIONAL ELECTRON GAS, SEMICONDUCTOR DEVICE INCLUDING THE STACK STRUCTURE AND METHODS OF MANUFACTURING THE SAME

摘要

PURPOSE: A laminate structure with 2D electronic gas, a semiconductor device including the same, and a manufacturing method thereof are provided to prevent the crystallization deterioration of a first semiconductor layer by forming a buffer layer between a substrate and the first semiconductor layer to reduce a lattice coefficient and a thermal expansion coefficient between the substrate and the first semiconductor layer. CONSTITUTION: A first semiconductor layer(10) is formed on a substrate(SUB1). The semiconductor layer includes a III-V semiconductor. The first semiconductor layer is thermally processed. A second semiconductor layer(20) is formed on the thermally processed first semiconductor layer. 2D electronic gas is formed on the first semiconductor layer by the second semiconductor layer.