| 摘要 |
The present invention relates to a manufacturing method of a photo-mask using a slit-type halftone pattern, and the photo-mask fabricated using the same, in particular, the present invention relates to a manufacturing method of photo-mask in which plural shading patterns are formed at the upper part of a transparent substrate, and transparent regions defined through these shading patterns. Among each sidewall of these shading patterns, at least one of the sidewalls that face each other is formed with a slit-type halftone pattern, these shading patterns are the shading patterns used to define the channel or source of thin-film transistor, a halftone pad layer can be also formed on the upper surface of the shading patterns formed with halftone patterns, the line width of the halftone pattern is the thickness of 10-80% of the line width of the shading pattern. |
