| 发明名称 |
METHOD OF FORMING A LOW CAPACITANCE SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR |
| 摘要 |
In one embodiment a transistor is formed with a gate structure having an opening in the gate structure. An insulator is formed on at least sidewalls of the opening and a conductor is formed on the insulator. |
| 申请公布号 |
HK1092279(A1) |
申请公布日期 |
2013.01.18 |
| 申请号 |
HK20060112545 |
申请日期 |
2006.11.15 |
| 申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES L.L.C. |
发明人 |
PRASAD VENKATRAMAN |
| 分类号 |
H01L |
主分类号 |
H01L |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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