发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for manufacturing a semiconductor device is provided to reduce the fluctuation of the area of wide width parts by containing the wide width parts fitted between narrow width parts. CONSTITUTION: In a process for connecting a flip chip, soldering materials attached in the front end of a protruded electrode(4) and soldering materials coated on terminals(bonding lead)(11) are electrically connected by heating. Each terminal comprises a wide width part(First part)(11w) having a first width(W1) and a narrow width part(Second part)(11n). If the soldering materials are heated, the thickness of the soldering materials arranged on the narrow width parts becomes thinner than the thickness of the soldering materials arranged on the wide width parts. In the process for connecting the flip chip, the protruded electrode is arranged on the narrow width parts to connect a flip chip on the narrow width parts. [Reference numerals] (11) Terminal(Bonding lead); (11n) Narrow width part(Second part); (11w) Wide width part(First part); (4) Protruded electrode; (W1,W2) Width
申请公布号 KR20130007484(A) 申请公布日期 2013.01.18
申请号 KR20120071290 申请日期 2012.06.29
申请人 RENESAS ELECTRONICS CORPORATION 发明人 KONNO JUMPEI;NISHITA TAKAFUMI;KINOSHITA NOBUHIRO;HASEGAWA KAZUNORI;SUGIYAMA MICHIAKI
分类号 H01L21/60 主分类号 H01L21/60
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