发明名称 APPARATUS FOR GROWING SILICON CRYSTAL AND METHOD FOR GROWING SILICON CRYSTAL USING THE SAME
摘要 PURPOSE: An apparatus and method for growing silicon crystal are provided to reduce manufacturing costs by decreasing power consumption for heating a system. CONSTITUTION: A chamber(110) provides a space for growing silicon crystal. A cooling jacket(130) is installed in the chamber and cools silicon ingot(120). A rotation shaft(140) rotates the cooling jacket. A heating unit(150) heats and melts the silicon ingot received in the cooling jacket. A pulling unit moves the heating unit up and down.
申请公布号 KR20130007354(A) 申请公布日期 2013.01.18
申请号 KR20110065461 申请日期 2011.07.01
申请人 SEMIMATERIALS. CO., LTD.;PARK, KUN 发明人 PARK, JONG HOON;PARK, SUNG EUN;PARK, KUN
分类号 C30B15/00;C30B29/06;H01L21/02 主分类号 C30B15/00
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