发明名称 |
APPARATUS FOR GROWING SILICON CRYSTAL AND METHOD FOR GROWING SILICON CRYSTAL USING THE SAME |
摘要 |
PURPOSE: An apparatus and method for growing silicon crystal are provided to reduce manufacturing costs by decreasing power consumption for heating a system. CONSTITUTION: A chamber(110) provides a space for growing silicon crystal. A cooling jacket(130) is installed in the chamber and cools silicon ingot(120). A rotation shaft(140) rotates the cooling jacket. A heating unit(150) heats and melts the silicon ingot received in the cooling jacket. A pulling unit moves the heating unit up and down.
|
申请公布号 |
KR20130007354(A) |
申请公布日期 |
2013.01.18 |
申请号 |
KR20110065461 |
申请日期 |
2011.07.01 |
申请人 |
SEMIMATERIALS. CO., LTD.;PARK, KUN |
发明人 |
PARK, JONG HOON;PARK, SUNG EUN;PARK, KUN |
分类号 |
C30B15/00;C30B29/06;H01L21/02 |
主分类号 |
C30B15/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|