发明名称 PLASMA PROCESSING APPARATUS
摘要 PURPOSE: A plasma processing apparatus is provided to suppress plasma potential by suppressing potential of an antenna. CONSTITUTION: Induction field is generated inside of a vacuum container(4) by applying high frequency current generated from a high frequency power supply(42) to an antenna(30). A substrate(2) is processed using plasma(50) generated by corresponding induction electric field. The inside of the vacuum container is vacuum-exhausted by a vacuum exhaust apparatus(8). Gas(24) is flew into the inside of the vacuum container through a gas inlet pipe(22). A holder(10) supporting a substrate is installed inside of the vacuum container. The holder is supported by a shaft(16). An insulation frame(38) is interposed in an opening part(7) of the ceiling surface(6) of the vacuum container. The antenna consists of traveling conductors(31,32) arranged in the vertical direction.
申请公布号 KR20130007413(A) 申请公布日期 2013.01.18
申请号 KR20120043054 申请日期 2012.04.25
申请人 NISSIN ELECTRIC COMPANY LTD. 发明人 TSUNODA TAKANORI;MATSUBARA YOSHIO;ANDO YASUNORI;TSUJI MASAYUKI
分类号 H05H1/46;C23C16/507;H01L21/3065 主分类号 H05H1/46
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