发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
PURPOSE: A plasma processing apparatus is provided to suppress plasma potential by suppressing potential of an antenna. CONSTITUTION: Induction field is generated inside of a vacuum container(4) by applying high frequency current generated from a high frequency power supply(42) to an antenna(30). A substrate(2) is processed using plasma(50) generated by corresponding induction electric field. The inside of the vacuum container is vacuum-exhausted by a vacuum exhaust apparatus(8). Gas(24) is flew into the inside of the vacuum container through a gas inlet pipe(22). A holder(10) supporting a substrate is installed inside of the vacuum container. The holder is supported by a shaft(16). An insulation frame(38) is interposed in an opening part(7) of the ceiling surface(6) of the vacuum container. The antenna consists of traveling conductors(31,32) arranged in the vertical direction.
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申请公布号 |
KR20130007413(A) |
申请公布日期 |
2013.01.18 |
申请号 |
KR20120043054 |
申请日期 |
2012.04.25 |
申请人 |
NISSIN ELECTRIC COMPANY LTD. |
发明人 |
TSUNODA TAKANORI;MATSUBARA YOSHIO;ANDO YASUNORI;TSUJI MASAYUKI |
分类号 |
H05H1/46;C23C16/507;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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