SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a driving method are provided to reduce deviation influence of a threshold value voltage of a transistor and to reduce the deterioration influence of the transistor. CONSTITUTION: A first terminal in a first switch(12) is electrically connected to a first line. One of source and drain in a transistor(11) is connected to a second terminal in the first switch and a first terminal in a second switch. The other one of the source and drain in the transistor is connected to a first terminal in a third switch(14) and a first terminal in a fourth switch. A gate in the transistor is connected to a second terminal in the second switch and an electrode in a capacitive element(17). The other electrode in the capacitive element is connected to a second terminal in a fourth switch and a first terminal in a load(16). A second terminal in the third switch is connected to a second line. A second terminal in the load is connected to a third line.