| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve an HEIP(Hot Electron induced Punch Through) property of the semiconductor device by increasing the thickness of an oxide film outside an active region through an oxidation process on the upper side of an exposed active region. CONSTITUTION: A trench is formed in a semiconductor substrate(100). A sidewall oxide film(110) is formed on the semiconductor substrate. A linear nitride film(120) is formed on the semiconductor substrate including the trench. An insulation layer is formed on the liner nitride film to fill the trench. A device isolation film(140) to define an active region(130) is formed by planarizing the insulation layer.</p> |
