LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME
摘要
PURPOSE: A light emitting device and a manufacturing method thereof are provided to reduce strain by preventing a QCSE(Quantum Confined Stark Effect) in an active layer. CONSTITUTION: A light emitting structure(110) includes an active layer(114), a first conductive semiconductor layer(112), and a second conductive semiconductor layer(116). The light emitting structure is formed with a plurality of pillars which are separated. A transmissive insulation layer is formed on the light emitting structure. A transparent conductive layer is formed on the upper side of the light emitting structure.
申请公布号
KR20130006977(A)
申请公布日期
2013.01.18
申请号
KR20110062695
申请日期
2011.06.28
申请人
SEMIMATERIALS. CO., LTD.;PARK, KUN
发明人
PARK, KUN;KIM, SUN MO;OH, CHUNG SEOK;HWANG, SE KWANG;SONG, HO GEUN;WON, JUN HO;PARK, JI SU