发明名称 LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME
摘要 PURPOSE: A light emitting device and a manufacturing method thereof are provided to reduce strain by preventing a QCSE(Quantum Confined Stark Effect) in an active layer. CONSTITUTION: A light emitting structure(110) includes an active layer(114), a first conductive semiconductor layer(112), and a second conductive semiconductor layer(116). The light emitting structure is formed with a plurality of pillars which are separated. A transmissive insulation layer is formed on the light emitting structure. A transparent conductive layer is formed on the upper side of the light emitting structure.
申请公布号 KR20130006977(A) 申请公布日期 2013.01.18
申请号 KR20110062695 申请日期 2011.06.28
申请人 SEMIMATERIALS. CO., LTD.;PARK, KUN 发明人 PARK, KUN;KIM, SUN MO;OH, CHUNG SEOK;HWANG, SE KWANG;SONG, HO GEUN;WON, JUN HO;PARK, JI SU
分类号 H01L33/08 主分类号 H01L33/08
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