HEAT TREATMENT EQUIPMENT FOR MANUFACTURING NITRIDE BASED SEMICONDUCTOR AND HEAT TREATMENT METHOD OF NITRIDE BASED SEMICONDUCTOR

摘要

PURPOSE: A thermal processing device for manufacturing a nitride based semiconductor and a method for thermally processing the nitride based semiconductor using the same are provided to activate a semiconductor layer by setting a frequency value according to the thickness of the semiconductor layer. CONSTITUTION: An insulation chamber(100) loads a substrate. The substrate has a top nitride based semiconductor layer. An induction coil part(200) surrounds the substrate. The induction coil part heats the top nitride based semiconductor layer. A heating control unit(300) provides a high frequency current to the induction coil part. [Reference numerals] (310) Reservoir; (320) Selector; (340) Controller; (430) Rotation controller