| 摘要 |
<p>PURPOSE: A method for manufacturing a mask for forming a contact hole of a semiconductor device is provided to prevent the asymmetry of a hole pattern due to a step between masks by forming a single mask pattern defining a hole pattern region. CONSTITUTION: An etch stop layer(12) is formed on an etched layer(11). A gap-fill layer is formed on the etch stop layer to fill a gap between sacrificial patterns. A line type mask pattern is formed on the gap-fill layer. A pillar pattern is formed by etching the sacrificial pattern using the mask pattern as an etching barrier. A hard mask layer is formed to fill a gap between pillar patterns. A hard mask pattern(20) opening a hole region is formed by removing the pillar pattern.</p> |
