| 摘要 |
PURPOSE: A source/drain of devices including high mobile channels is provided to improve the driving current of the final transistors and reduce a source-drain resistance. CONSTITUTION: A source and drain region(42) is formed in a groove. A silicide region is formed on the source and drain region. A IV semiconductor region(46) is formed on a buffer layer(44). The buffer layer is made of III-V compound semiconductor materials. The lower side of the buffer layer has a lattice constant which is similar to the lattice constant of a channel layer(26). |
