SEMICONDUCTOR DEVICE AND METHOD FOR GROWING SEMICONDUCTOR CRYSTAL

摘要

PURPOSE: A semiconductor device and a method for growing a semiconductor crystal are provided to reduce a leakage current due to crystal defects by forming a fine pattern on a silicon carbide substrate to reduce dislocation transmitted to an epitaxial layer. CONSTITUTION: A base substrate(10) includes silicon carbide. A pattern(20) is formed with an elliptic cone shape on the base substrate and includes carbon oxide or silicon oxide. An epitaxial layer(30) is formed on the exposed substrate between patterns.