| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure of a highly-sensitive solid state imaging device in which defects due to cracks do not occur in an anti-reflection film formed on a surface of a microlens for the purpose of high transmittance of the microlens provided in the solid state imaging device. <P>SOLUTION: A solid state imaging device 1 in which microlenses 7 are provided one-on-one with photoelectric conversion elements, respectively in a light-reception effective region A on a light-receiving surface side of a solid state imaging device pixel part where a plurality of photoelectric conversion elements 3 are planarly arranged on a semiconductor substrate 2, comprises: a plurality of convex bodies 72 of a material the same as a material of the microlens, which are provided in a peripheral region B adjacent to the light-reception effective region so as to surround the light-reception effective region; and anti-reflection films 8 uniformly covering microlenses and surfaces of the convex bodies. <P>COPYRIGHT: (C)2013,JPO&INPIT |
